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Package Marking and Ordering Information
Part Number
FCH47N60_F133
Top Mark
FCH47N60
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
BV DS
I DSS
I GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain to Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-to-Body Leakage Current
V GS = 0 V, I D = 250 μ A, T C = 25°C
V GS = 0 V, I D = 250 μ A, T C = 150°C
I D = 250 μ A, Referenced to 25°C
V GS = 0 V, I D = 47 A
V DS = 600 V, V GS = 0 V
V DS = 480 V, T C = 125°C
V GS = ±30 V, V DS = 0 V
600
-
-
-
-
-
-
-
650
0.6
700
-
-
-
-
-
-
-
1
10
±100
V
V
V/°C
V
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-to-Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 23.5 A
V DS = 40 V, I D = 23.5 A
3.0
-
-
-
0.058
40
5.0
0.070
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss(eff.)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DS = 480 V, V GS = 0 V,
f = 1.0 MHz
V DS = 0 V to 400 V, V GS = 0 V
-
-
-
-
-
5900
3200
250
160
420
8000
4200
-
-
-
pF
pF
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay
Turn-On Rise Time
Turn-Off Delay
Turn-Off Fall Time
V DD = 300 V, I D = 47 A,
V GS = 10 V, R G = 25 Ω
(Note 4)
-
-
-
-
185
210
520
75
430
450
1100
160
ns
ns
ns
ns
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 480 V, I D = 47 A,
V GS = 10 V
(Note 4)
-
-
-
210
38
110
270
-
-
nC
nC
nC
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain-to-Source Diode Forward Current
Maximum Pulsed Drain-to-Source Diode Forward Current
-
-
-
-
47
141
A
A
V SD
t rr
Q rr
Drain-to-Source Diode Forward Voltage
Reverse-Recovery Time
Reverse-Recovery Charge
V GS = 0 V, I SD = 47 A
V GS = 0 V, I SD = 47 A,
dI F /dt = 100 A/ μ s
-
-
-
-
590
25
1.4
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 18 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 48 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature.
?2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C2
2
www.fairchildsemi.com
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